Sample 45

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
16	14	Si wafer - not bonded	15	0	4.0	100	750	20	10	45.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 13.637 um
Calculated remaining resist as 7.94um, indicating an erosion of 0.80um in 10 minutes of etching
This equates to an erosion rate of 80 nm/min
The etch depth of 5.70um in 10 mins indicates an etch rate of 570.0nm/min
The selectivity is therefore 7.09:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	13.636900
Remaining resist (um)	7.936900
Semiconductor etched(um)	5.700000
Etch rate (nm/min)	570.000000
Erosion rate (nm/min)	80.410000
Selectivity	7.088671